| abstract |
The present invention provides a method for increasing the sublimation rate when used as a raw material for the sublimation recrystallization method, and the amount of niobium carbide remaining without sublimation is small, and the productivity of the tantalum carbide single crystal can be improved, and the niobium carbide can be obtained. A tantalum carbide powder having a large size in a single crystal (for example, a single crystal wafer).nA niobium carbide powder, which is a niobium carbide powder having a Blaine specific surface area of 250 to 1,000 cm 2 /g, characterized in that the total amount of the niobium carbide powder is more than 0.70 mm and less than 3.00 mm. The proportion of the niobium carbide powder is 50% by volume or more. In the crucible (1), the niobium carbide powder (5) accommodated by heating is sublimated, and a single crystal (6) of niobium carbide is formed on the seed crystal (4) provided on the bottom surface portion of the upper lid (3). |