http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201503285-A

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filingDate 2014-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201503285-A
titleOfInvention Semiconductor device manufacturing method and semiconductor manufacturing device
abstract It is to suppress the occurrence of defects caused by light corrosion in the semiconductor device.nThe method for manufacturing a semiconductor device includes: an insulating layer forming process for forming an insulating layer having a concave portion on a substrate (SUB); and a conductive film forming process for forming a conductive film in the concave portion and the insulating layer; It is removed by polishing a conductive film on the insulating layer; and a cleaning process is performed to clean the insulating layer in a light-shielded state.nAfter the polishing process and the cleaning process, or after the cleaning process, the presence or absence of the substrate (SUB) in the light-shielding state is detected by the infrared sensor (SNS1), and the substrate (SUB) is moved.
priorityDate 2013-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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