http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201502721-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate | 2014-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05f24d2638752f91da99fd428166da82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d664a2a31377ce69eb486c99d12a8ba4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_603bee38b614f63a508dca335e885792 |
| publicationDate | 2015-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201502721-A |
| titleOfInvention | Method for producing resin structure for microstructures and method for producing microstructures |
| abstract | The present invention provides a method for producing a resin structure for a microstructure, which comprises the following steps (A) to (F): (A) using a composition for forming a pattern of a pattern forming film, and applying it on a substrate a step of forming a sacrificial film of a pattern, the photopattern-forming film forming composition comprising: (1) a polymer compound in which a part of a phenolic hydroxyl group is protected by a protecting group which can be desorbed by an acid, and (2) light An acid generator, (3) an epoxy compound, (4) an organic solvent, (B) a step of heating the substrate, and (C) a step of irradiating the sacrificial film along the pattern wiring image using the first high-energy line (D) a step of forming a sacrificial film pattern by development by an alkaline developing solution, and (E) a step of irradiating the obtained sacrificial film pattern as ultraviolet rays of the second high-energy line, (F) a step of heating the substrate at 80 to 250 ° C, wherein the irradiation amount of the first high-energy line of (C) is 250 mJ/cm 2 or less, and the side wall angle of the substrate and the sacrificial film after the step (F) is maintained at 80° or more Below 90°.nAccording to the production method of the present invention, a sacrificial layer pattern having high heat resistance can be prepared. |
| priorityDate | 2013-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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