http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201501316-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate | 2014-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c6267d8c775da162e94c833c3742ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2627974b94ebbe182a376fa15d81bafd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6539728aad4a708a8bf00790526094dc |
| publicationDate | 2015-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201501316-A |
| titleOfInvention | Semiconductor device |
| abstract | The present invention provides a semiconductor device using an oxide semiconductor and having high reliability. Alternatively, the present invention provides a semiconductor device using an oxide semiconductor and achieving miniaturization while maintaining good electrical characteristics. A semiconductor device according to an aspect of the present invention includes: a first protective insulating layer; an oxide semiconductor layer on the first protective insulating layer; a source electrode and a drain electrode electrically connected to the oxide semiconductor layer; and a source electrode and a drain a gate insulating layer on the electrode electrode and overlapping the oxide semiconductor layer; a gate electrode overlapping the oxide semiconductor layer via the gate insulating layer; and a second protection covering the source electrode, the drain electrode, and the gate electrode Insulation. Further, the first protective insulating layer and the second protective insulating layer include an aluminum oxide film having an oxygen excess region and have regions in contact with each other in a region where the source electrode, the drain electrode, and the gate electrode are not present. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10950734-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I806127-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10192995-B2 |
| priorityDate | 2013-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.