| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2014-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fbb7b9de0a89e6b02a4ea495f48b631 |
| publicationDate |
2015-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201501313-A |
| titleOfInvention |
Semiconductor device and method of manufacturing same |
| abstract |
One of the objects of the present invention is to provide a semiconductor device which can be easily manufactured even if it is miniaturized, and which can suppress a decrease in electrical characteristics accompanying miniaturization and a method of manufacturing the same. a source electrode layer and a drain electrode layer are formed on a top surface of the oxide semiconductor layer, a side surface of the oxide semiconductor layer and a side surface of the source electrode layer are on the same surface, a side surface of the oxide semiconductor layer, and the source The side faces of the electrode layer are electrically connected to the first wiring in a side contact manner. Further, the side surface of the oxide semiconductor layer and the side surface of the gate electrode layer are located on the same surface, and the side surface of the oxide semiconductor layer and the side surface of the gate electrode layer are electrically connected to the second wiring in a side contact manner. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9698277-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9831353-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11239237-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11454891-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10164120-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I672785-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10290745-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I750384-B |
| priorityDate |
2013-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |