http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201501310-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2014-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86278739d78f82e4e8019458d88aea98 |
| publicationDate | 2015-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201501310-A |
| titleOfInvention | Semiconductor device |
| abstract | One of the objects of the present invention is to provide a semiconductor device using an oxide semiconductor with good electrical characteristics. An object of the present invention is to provide a highly reliable semiconductor device in which variation in electrical characteristics of a semiconductor device using an oxide semiconductor is suppressed. The semiconductor device includes: an island-shaped semiconductor layer on a base insulating layer; a pair of electrodes on the semiconductor layer; a barrier layer contacting the bottom surface of the electrode; a gate electrode on the semiconductor layer; and a semiconductor layer and the gate electrode The gate insulation layer. Further, the semiconductor layer comprises an oxide semiconductor, the insulating base layer comprises hafnium oxide or hafnium oxynitride, the electrode comprises Al, Cr, Cu, Ta, Ti, Mo or W, and the barrier layer comprises an oxide comprising an oxide semiconductor One or more of the metal elements contained. Further, when viewed in plan, the electrode and the barrier layer extend to the outside of the semiconductor layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111542914-A |
| priorityDate | 2013-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 95.