| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0cdb88d7577707b85ff2721c34d1cc83 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2014-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70c56168ebed923891f9d53656c03189 |
| publicationDate |
2015-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201501305-A |
| titleOfInvention |
Semiconductor device and method of manufacturing same |
| abstract |
The present invention provides a semiconductor device which can thin the barrier metal and secure adhesion to the metal electrode, and control and manage the film thickness of the film. a semiconductor device comprising: an active region on a semiconductor substrate; and a trench having a lower portion and an upper portion in the active region; and a gate insulating film covering the inner wall surface of the trench; and a gate insulating film covering the lower portion of the trench a barrier metal; and a second barrier metal covering the first barrier metal; and a metal electrode covering the second barrier metal, the lower portion of the buried trench; and a gap insulating film on the upper portion of the buried trench. The film thickness of the second barrier metal is thinner than the film thickness of the first barrier metal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I560853-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108796470-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10886170-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108796470-B |
| priorityDate |
2013-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |