| abstract |
The present invention provides an etching method for a semiconductor substrate, which is an etching method for selectively removing a second layer on a semiconductor substrate having a first layer and a second layer, wherein the first layer includes germanium (Ge), the first The second layer comprises at least one specific metal element selected from the group consisting of nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), and the semiconductor substrate is etched by a method comprising a non-halogen acidic compound. The etchant contacts the second layer to remove the second layer. |