| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_41ac7ff6ab574ca3737b892da2ebfe6f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-761
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7815 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2014-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71dc395861da2dc3c0ddd088b152d2d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3034c0f32e2222d8b05a8f5979b22893
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0675f1b048d167c7ad33e74412695bfc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68ec502789b5009dfdb31cd595572a5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfa1f2c381680d406bb2ce9e11263afa |
| publicationDate |
2014-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201448212-A |
| titleOfInvention |
Tantalum carbide semiconductor device |
| abstract |
The tantalum carbide semiconductor device includes an element isolation layer and an electric field relaxation layer. The element separation layer is formed between the main cell region and the sensing cell region, from the surface of the substrate region until deeper than the aforementioned substrate region, and is separated into the aforementioned main cell region side and the aforementioned sensing cell region side . The electric field relaxation layer is formed from the bottom of the base region to a position deeper than the element isolation layer. The electric field relaxation layer is separated into the main cell region side and the sensing cell region side, and at least a part of the element isolation layer is disposed inside the separated portion of the electric field relaxation layer. |
| priorityDate |
2013-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |