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filingDate 2014-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1b891488a5489a2d8d2e20156b6f251
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publicationDate 2014-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201448036-A
titleOfInvention UV hardening process for improving the mechanical strength and throughput of low-k dielectric films
abstract Disclosed herein are low dielectric constant porous dielectric films having improved mechanical strength and methods of making the low dielectric constant porous dielectric films. A method of forming a dielectric layer can include: positioning a substrate in a processing chamber; transferring a deposition gas to the processing chamber; depositing a dense organic germanium layer on the surface of the substrate by using a deposition gas, the dense organic germanium layer including the hole Carbon; forming a pore-forming plasma from the reaction gas; exposing the dense organic layer to the pore-forming plasma to produce a porous organic layer, wherein the pore-forming plasma removes at least a portion of the pore-forming carbon; and exposing the porous organic layer Ultraviolet (UV) radiation.
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