| abstract |
The invention relates to a method for manufacturing a semiconductor substrate, comprising the steps of: providing a semiconductor substrate having a nucleation growth layer, forming a microparticle etching mask on the nucleation growth layer, etching the nucleation growth layer, and filling the inorganic condensation The glue is etched into the groove, the microparticle etch mask is removed, the epitaxial column is grown, and the epitaxial column is laterally bonded, thereby forming a semiconductor substrate having a low defect flat bonding film. The manufacturing method of the invention can limit the defects of the growth of the nucleation growth layer or the epitaxial column between the epitaxial columns, and form a semiconductor substrate having a low defect flat bonding film after horizontally bonding at the top end of the epitaxial column. That is, a low defect semiconductor substrate. |