http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201445244-A

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filingDate 2010-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbad61c73daaf09b451d6638d83b9df8
publicationDate 2014-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201445244-A
titleOfInvention Reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
abstract An object of the present invention is to provide a reflective mask substrate which can improve the contrast of EUV exposure light when used in a reticle, and can improve the pattern resolution of the edge portion of the pattern to perform high-resolution pattern transfer. Reflective reticle. The reflective reticle substrate 10 of the present invention comprises a substrate 1, a multilayer reflective film 2 for sequentially reflecting EUV exposure light formed on the substrate, and an absorber film 4 for absorbing EUV exposure light, and the absorber film 4 comprises Ta The material is formed with a film density of 6.0 to 16.0 g/cm3. The reflective reticle 20 is obtained by forming a transfer pattern on the absorber film of the reflective reticle base.
priorityDate 2009-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.