http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201444061-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66833 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2014-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d25ef39b3bc6ac7e6d63a4458100658 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e75e16316c66415dca869e4f88f88af http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f108e7213e785cac48e54542046f7a3e |
| publicationDate | 2014-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201444061-A |
| titleOfInvention | Semiconductor device and method of manufacturing same |
| abstract | The present invention is directed to a semiconductor device and a method of fabricating the same that separates a MONOS-type memory cell of a gate structure, prevents a short circuit between the gate electrode and the memory gate electrode, and improves the reliability of the semiconductor device. Selection of a region other than the shunt portion CS1 of the end portion of the gate electrode CG1 of the first direction in the MONOS memory having the gate electrode CG1 and the memory gate electrode MG1 which are adjacent to each other and extending in the first direction The upper surface of the gate electrode CG1 is covered with a cap insulating film CA1. The memory gate electrode MG1 is terminated on the cover insulating film CA1 side with respect to the boundary between the upper surface of the shunt portion CS1 exposed from the cap insulating film CA1 and the cap insulating film CA1. |
| priorityDate | 2013-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.