| abstract |
The present invention relates to a semiconductor package structure and a method of fabricating the same. The semiconductor package structure has a semiconductor component including a body, a plurality of conductive vias, and at least one filler. The electrically conductive channels extend through the body. The filler is located in the body, wherein the filler has a coefficient of thermal expansion that is different from a coefficient of thermal expansion of the body and the conductive channels. Thereby, the thermal expansion coefficient of the entire semiconductor element can be adjusted to reduce warpage. |