| abstract |
The present invention provides a supply source for the transport of a dopant gas composition comprising CO. The composition includes a controlled amount of a diluent gas mixture such as helium and hydrogen, each of which is provided at a controlled volume ratio to ensure optimum carbon ion implantation performance. The composition can be packaged into a dopant gas set consisting of a supply source comprising CO and a supply of diluent mixture. Alternatively, the composition can be optionally pre-mixed and introduced from a single source that can be activated in response to the negative pressure conditions such that the dopant mixture flows from the internal volume of the device into the ion source device along the drainage channel. |