| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e6d67894a893256e5b4d85401e466143 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2815
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2014-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c4faa6723349cad3edc9c0eda07ea94 |
| publicationDate |
2014-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201442244-A |
| titleOfInvention |
Enable the polysilicon gate of the spacer |
| abstract |
A spacer etch process that produces ultra-narrow polysilicon and gate oxide for an insulating gate for use with an insulated gate transistor. Dielectric channels are formed using dielectric and spacer thin film deposition techniques. The spacer film is removed from the dielectric, wherein a narrow channel is formed in the dielectric. An insulating gate oxide is grown on portions of the semiconductor substrate exposed at the bottom of the narrow channels. Next, polycrystalline germanium is used to fill the narrow channels. The dielectric is removed from the face of the semiconductor leaving only the very narrow gate oxide and the polysilicon. The very narrow gate oxide and the polysilicon are separated into insulating gates for the insulated gate transistors. |
| priorityDate |
2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |