http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201440160-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9bceffddb90b9b3da8a772212961764b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d10f91adc27ce6de51d798a37fc5e1bc |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68309 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68313 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B25J15-0014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68735 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6838 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate | 2013-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3f56a73888dfc78c023393f68d5eaa4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_141368aa3fda8400300147ed2ff7e38a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5ceaf3e32235ac3558dec1e9213e201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_392a2b39e389f8599bb47f2b0f63a582 |
| publicationDate | 2014-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201440160-A |
| titleOfInvention | Semiconductor process carrier |
| abstract | [Problem] When a small-diameter semiconductor substrate (small substrate) is used in a semiconductor manufacturing apparatus corresponding to a large-diameter 矽 substrate, the small substrate is adsorbed and fixed on a kit for eliminating the size difference. Even if it is in the vertical direction or the reverse direction, the small substrate does not fall. [Solution] In order to apply the small substrate to the semiconductor manufacturing apparatus corresponding to the large-diameter ruthenium substrate, the transfer substrate portion 1 composed of the large-diameter ruthenium substrate is subjected to hole processing to form the opening portion 10, and the back surface is attached to the back surface. The bismuth imine film 2 can be used to adsorb a vacuum chuck and an electrostatic chuck to a small substrate, and includes a structure including a substrate insertion portion 7b and a substrate housing portion 7c that can cover a portion of the opening 10 and can insert and house a small substrate. 7, according to this configuration can achieve the transfer and process. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I774590-B |
| priorityDate | 2013-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.