http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201440130-A

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filingDate 2014-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42bc3d6354d946c135b61aad7831609f
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publicationDate 2014-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201440130-A
titleOfInvention Microstructure forming method and fin structure
abstract The present invention provides a method of forming a fine structure which can obtain a fine structure of a high-quality III-V semiconductor. The fine structure is formed by forming a trench 24 on the wet etch stop layer 22 and the cladding layer 23 of the coated wafer W, and exposing the crystal plane 25 of the wafer W to the bottom of the trench 24 to the trench Indium phosphide is filled in the groove 24 in a vapor phase, and the indium phosphide-filled trench 24 and the cap layer 23 are covered with the indium layer 27, and the indium phosphide filled in the trench 24 is heated and melted. The molten indium phosphide is slowly cooled, and the crystallized indium phosphide 32 is precipitated by using the crystal face 25 of the crucible as a seed crystal, and the coating layer 23 is removed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I677013-B
priorityDate 2013-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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