| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72d28f1cec5a76f262a1595c038a5167 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2101-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2101-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-11 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-626
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F9-5728
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F9-65583
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F9-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F9-6512
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-654
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6572 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F9-53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate |
2014-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ad1672aaf889e83d3f93e356c9014da |
| publicationDate |
2014-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201439110-A |
| titleOfInvention |
Semiconductor material comprising aza-substituted phosphine oxide matrix and metal salt |
| abstract |
The present invention relates to a semiconductor material having improved electrical properties, comprising at least one salt or complex of a metal cation and a nitrogen-substituted phosphine oxide compound, and to a compound suitable for use in the organic semiconductor material and using the improved electricity An electronic device of the semiconductor material. |
| priorityDate |
2013-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |