| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| filingDate |
2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f67b0212f6fd1b4f0e5143f7afd92ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcc104abe4eb5db08ec6a34eb0346ab3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc268ad00546a86c3211f9cd5314d59e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09ea67f852809d6bc9a9a259c2d25fd0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4b37c55314f2162dd29203de7b4693e |
| publicationDate |
2014-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201438273-A |
| titleOfInvention |
Group III nitride semiconductor structure and technology |
| abstract |
The structure and technology of the semiconductor semiconductor integrated circuit of the group III nitride are disclosed. In some cases, the structure includes a first semiconductor layer formed on the nucleation layer, the first semiconductor layer includes a three-dimensional GaN layer and a two-dimensional GaN layer, and the three-dimensional GaN layer is on the nucleation layer and has a plurality of three-dimensional semiconductor structures. The two-dimensional GaN layer is on the three-dimensional GaN layer. The structure may also include a second semiconductor layer formed on the first semiconductor layer or within the first semiconductor layer, wherein the second semiconductor layer comprises AlGaN on the two-dimensional GaN layer and the GaN layer on the AlGaN layer. Another structure includes a first semiconductor layer formed on the nucleation layer, a first semiconductor layer formed on the nucleation layer, and a second semiconductor layer formed on the first layer On or in the first semiconductor layer, wherein the second semiconductor layer comprises AlGaN on the two-dimensional GaN layer and the GaN layer on the AlGaN layer. |
| priorityDate |
2012-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |