http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201437760-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0606c8e113c860d8a6c41e2aaaf3120d |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
filingDate | 2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ac065c818068652a814fdab2f43753b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18f47657288576cd97fe9241f67013cb |
publicationDate | 2014-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201437760-A |
titleOfInvention | Positive type photosensitive resin composition and pattern forming method thereof |
abstract | The present invention relates to a positive photosensitive resin composition comprising: a novolak resin (A), an ester of an o-naphthoquinonediazidesulfonic acid (B), a reduction inhibitor (C), and a solvent (D). Wherein the ester of the o-naphthoquinonediazide sulfonic acid (B) is obtained by dissolving an o-naphthoquinonediazidesulfonic acid compound and a hydroxy compound in an organic solvent, and using an amine compound as a condensing agent, and undergoing a condensation reaction. In the positive photosensitive resin composition, the residual amount of the amine compound is from 1 ppm to 50 ppm. |
priorityDate | 2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 311.