http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201435502-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
filingDate | 2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ae21d938c271dc81720157784faba47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ab9fd0e67049447b5c4db1f50f5e898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_134bd9f98bfb5deee9c3e1acccdfc39d |
publicationDate | 2014-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201435502-A |
titleOfInvention | Pattern forming method, resist pattern formed therefrom, and method of manufacturing electronic component using the same and electronic component |
abstract | The present invention provides a pattern forming method, a resist pattern formed therefrom, and a method of manufacturing an electronic component using the same, and an electronic component. The pattern forming method can form a fine isolation which is difficult to form in the conventional positive pattern forming method. By using a specific resist pattern for pattern inversion, a fine pattern such as a line pattern or a fine dot pattern can eliminate the dilemma of thinning and etching resistance, and can be sufficiently resistant even if the pattern is fine. Etched pattern. The pattern forming method of the present invention comprises: (1) forming a film by a sensitizing ray-sensitive or radiation-sensitive resin composition, and the sensitizing ray-sensitive or radiation-sensitive resin composition contains an increase in polarity by an action of an acid, a resin (A) having reduced solubility in a developing solution containing an organic solvent; (2) exposing the film; (3) developing the exposed film using a developing solution containing an organic solvent, thereby forming a negative pattern The negative pattern has a space portion in which a part of the film is removed, and a residual film portion that has not been removed by development; (4) a pattern inversion is formed in the negative pattern so as to be embedded in the space portion of the negative pattern. The resist film is used; (5) the residual film portion of the negative pattern is removed using an alkaline wet etching solution, whereby the negative pattern is inverted to a positive pattern. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I698722-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I746628-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I731034-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10788754-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108055851-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108055851-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I603145-B |
priorityDate | 2012-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 772.