| abstract |
The present invention provides a polymer for a resist and a resist composition containing the polymer, which is a homopolymer of a hydroxyl group-containing adamantyl (meth) acrylate, and a part or all of a hydroxyl group in the above homopolymer When it is replaced by an acetal group and patterned by photolithography, in particular, when a pattern is formed by the NPD method, thickness loss can be prevented, and at the same time, the etching resistance of the resist due to thickness loss can be prevented from being lowered, thereby forming excellent It is useful for the sensitivity and resolution of the fine resist pattern, and has an excellent contrast improvement effect. |