| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1eb9cd2af2f87dcf20b0fbbdfe79996e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2013-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a9dd1f354c7746f16d795c1efec6630
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7adc3f5ecafee22ddef7e08eee46d303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a792920ee91dd68734d5c8d4f5a21af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be65268af8586869985828c89ca1ea25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36ac4628b75dd196d8b2f3580303f991
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d42803720c2b0beb6a11ed0a71fa6f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37d8d191d92327ac426d69d4718feda2 |
| publicationDate |
2014-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201430951-A |
| titleOfInvention |
Conformal film deposition for gully |
| abstract |
A method and apparatus are disclosed for conformally depositing a dielectric oxide in a high aspect ratio gap in a substrate. A substrate having more than one gap is provided into a reaction chamber, wherein each gap has a depth to width aspect ratio greater than about 5:1. A first dielectric oxide layer is deposited in the one or more gaps by conformal film deposition (CFD). Etching a portion of the first dielectric oxide layer by plasma etching, wherein etching the portion of the first dielectric oxide layer at a rate near a top surface of each gap is faster than a velocity near a bottom surface, such that the A dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap. A second dielectric oxide layer is deposited over the first dielectric oxide layer over the first dielectric oxide layer by CFD. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105937023-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I718294-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105938796-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105938796-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105937023-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111344857-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10151034-B2 |
| priorityDate |
2012-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |