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filingDate 2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b8ac77de5555d754234572e634d869d
publicationDate 2014-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201428823-A
titleOfInvention Method for manufacturing epitaxial wafer, epitaxial wafer, and method for manufacturing solid-state imaging device
abstract The present invention provides an epitaxial germanium wafer capable of suppressing metal contamination and exhibiting epitaxial defects caused by dislocation clusters and COP by exerting higher absorption ability, and a method of manufacturing the same. The method for fabricating the epitaxial germanium wafer 100 of the present invention includes the first step of irradiating the germanium wafer 10 containing no dislocation clusters and COP with cluster ions 16 to form a surface 10A on the germanium wafer. The reforming layer 18 in which the constituent elements of the cluster ions 16 are solid-solved; and the second step, the epitaxial layer 20 is formed on the modified layer 18 of the tantalum wafer 10.
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