| abstract |
The invention discloses a method for lithography, the method comprising: obtaining (12) a self-organizing 共聚物 segment copolymer layer (21) on a neutral layer overlying a substrate (23), the self-organizing The segment copolymer layer (21) includes at least two polymer components (24, 25) having mutually different etching resistances, and further, the self-organizing segment copolymer layer (21) includes at least two The microphase of the polymer component (24, 25) separates to form a copolymer pattern structure, - selectively etches (14) one of the first polymer components of the self-organizing segment copolymer layer (21) (25) Thereby, leaving a second polymer component (24), using the second polymer component (24) as a mask, applying a plasma etch (16) to the neutral layer (22) Wherein the plasma etch (16) comprises an inert gas and H2. |