http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201428427-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F214-18 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F214-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0395 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F20-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate | 2013-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_926b08cd2f1681877250ba029f56b2fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea0add81bb44226ce3a7adcf9dd82631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aa197a0faee499992f0da36115aa856 |
| publicationDate | 2014-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201428427-A |
| titleOfInvention | Positive photoresist material, polymerizable monomer, polymer compound, and pattern forming method using the same |
| abstract | A positive-type photoresist material comprising a polymer compound having a weight average molecular weight of 1,000 to 500,000 in a repeating unit represented by the general formula (1); □ (R1 is a linear chain having a carbon number of 1 to 4) Or a branched alkyl group, R 2 is a hydrogen atom, or a fluorenyl group or an acid labile group having a carbon number of 1 to 15, and R 3 is a hydrogen atom, a methyl group or a trifluoromethyl group, and 0 < a ≦ 1.0). The positive-type photoresist material of the present invention has high effect of suppressing acid diffusion, high resolution, and good pattern shape and edge roughness after exposure. Therefore, it is possible to obtain positive light which is particularly suitable as a fine pattern forming material for a super LSI manufacturing or a photomask obtained by EB drawing, a g-line, an i-line, a KrF excimer laser, or a pattern forming material for EB or EUV exposure. Resistive materials, especially chemically amplified positive photoresist materials. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I602835-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I624482-B |
| priorityDate | 2012-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 321.