| abstract |
A semiconductor device includes a transistor formed in a semiconductor substrate having a first major surface. The transistor includes a source region, a drain region, a channel region, a drift region, and a gate electrode adjacent to the channel region. The gate electrode is configured to control the conductivity of the channel formed in the channel region, the channel region and the drift region being disposed along the first direction between the source region and the drain region, the first direction being parallel to the first major surface. The channel region has a shape of a first ridge extending along the first direction, and the transistor includes a first field plate disposed adjacent to the drift region. |