http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201423007-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e7e0e42cba4bee6c48312821708b5d3a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F24J2-48 |
| filingDate | 2012-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b53d874b9a3037751a4136d9f3bd6dd5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fb742ed081f45af43aee7f3b4e27248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_320499fc5890e0b50613ab0a08b2e9df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fa0d947916871a4f2afc108a0e7c41c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a3be0bcebca600aadabd27125003101 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_859be48fa086e7ffe781f42631d93538 |
| publicationDate | 2014-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201423007-A |
| titleOfInvention | Film forming method for solar collector |
| abstract | The present invention relates to a film forming method for a solar collector for forming a solar-selective absorbing film having high absorptivity and low emissivity on a solar collector. The invention comprises the following steps: A, roughening the heat conduction layer of the metal substrate; B, forming the ruthenium film absorption layer; C, forming the aluminum nitride anti-reflection layer. The heat-conducting layer of the roughened metal substrate can effectively introduce incident sunlight and reduce the amount of reflection, and the roughened surface can also increase the bonding force with the 矽 film absorbing layer to effectively reduce the film splitting phenomenon, and the aluminum nitride anti-reflection The layer can increase the solar thermal energy absorption rate and reduce the emissivity, and the thermal expansion coefficient of the aluminum nitride is close to that of the tantalum, and the high temperature operation can effectively reduce the thermal stress between the tantalum film absorption layer and the aluminum nitride anti-reflection layer. |
| priorityDate | 2012-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.