http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201421584-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate | 2013-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c4ea8733ef97034d09e57f4e7526eac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a05f2edd467e949fcfb30ffa2aa29413 |
| publicationDate | 2014-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201421584-A |
| titleOfInvention | Method for manufacturing mixed substrate and mixed substrate |
| abstract | The present invention relates to a method of manufacturing a hybrid substrate which can be put into a semiconductor manufacturing line, that is, implanting ions from the surface of the ruthenium substrate (1) to form an ion implantation region (3), and implanting ions into the ruthenium substrate. After the surface is bonded to the surface of the sapphire substrate (4) directly or via the insulating film (2), the ruthenium substrate (1) is peeled off in the ion implantation region (3) to obtain ruthenium on the sapphire substrate (4). A method for producing a mixed substrate of a mixed substrate (8) of a film (semiconductor layer) (6), characterized in that the sapphire substrate (4) is heat-treated in a reducing atmosphere and then attached to the ruthenium substrate (1) Hehe. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I785234-B |
| priorityDate | 2012-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.