| abstract |
The present invention relates to an aqueous cleaning composition and method for cleaning a semiconductor device comprising a copper interconnect after CMP, wherein the cleaning composition comprises: (A) N, N, N'-trimethyl-N'- ( 2-hydroxyethyl)ethylenediamine; and (B) at least one corrosion inhibitor selected from the group consisting essentially of uric acid, xanthine, theophylline, paraxanthine, theobromine, caffeine, guanine , hypoxanthine, adenine and combinations thereof. |