| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66681 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2013-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3e326083cd5f55f7c3230efbb5b0b46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_938fb562417a139693ad9ac1ec39bf16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_083f6d0fadcac9ee305bf73b6f36f4f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_070bb350a8e3771b9ecd9c23bc833f21 |
| publicationDate |
2014-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201415641-A |
| titleOfInvention |
P-type field effect transistor structure and forming method thereof |
| abstract |
An embodiment of the present invention provides a method for forming a p-type field effect transistor structure, including forming a mask layer on a semiconductor substrate, and the mask layer has a semiconductor region with an opening exposing the semiconductor substrate; and performing the semiconductor substrate via the opening of the mask layer The n-type dopant ions are implanted to form an n-type well in the semiconductor region; and the semiconductor substrate is implanted through the opening of the mask layer to form the germanium channel implant region in the n-type well. |
| priorityDate |
2012-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |