| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-14 |
| filingDate |
2013-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43a4dc0d31aa6016dc7428009c19f40c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81708f5a1e074289b55890c2db7c0902
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29d86490305cf48157d6d4c81a0de428
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1216cd9e0b6675edb9350f77f7921df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd3f80b5537e8ab56c35c6e87c990faf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f18e26175c50ccb976418978ceb8da8 |
| publicationDate |
2014-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201415554-A |
| titleOfInvention |
Method for forming Cu wiring and computer readable memory medium |
| abstract |
The present invention discloses a method of forming a Cu wiring by forming a Cu wiring in a recess formed in a specific pattern of a substrate. The Cu wiring forming method has a step of forming a barrier film on at least a surface of the concave portion (step 2); and forming a Cu alloy film containing an alloy component having a higher electron mobility resistance than pure Cu and a resistance value to a permissible range by PVD. And a step of embedding the Cu alloy film in the concave portion of the surface of the barrier film (step 4); forming a cumulative layer on the Cu alloy film (step 5); and grinding the entire surface by CMP in the concave portion A step of forming Cu wiring (step 7). |
| priorityDate |
2012-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |