http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201414801-A

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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91e0079fabff57f5b7cfd9bfb42c8f17
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publicationDate 2014-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201414801-A
titleOfInvention Organic thin film transistor, compound, organic semiconductor material for non-emissive organic semiconductor device, material for organic thin film transistor, coating solution for non-emissive organic semiconductor device, and organic semiconductor film for non-emissive organic semiconductor device
abstract An organic thin film transistor which uses a compound represented by the general formula (1) for a semiconductor active layer having a high carrier mobility and a small change in threshold voltage after repeated driving. R1 to R10 are a hydrogen atom or a substituent; and at least one of R1 to R10 is a substituent represented by the following formula (W) or an aromatic hydrocarbon ring formed by two adjacent ones of R1 to R10. There are substituents represented by the general formula (W). * indicates a bonding position to a benzobisbenzofuran skeleton; L represents a single bond or a divalent linking group; and R represents a substituted or unsubstituted acyclic alkyl group having 2 or more carbon atoms and ethoxylated The number of repeating units of the base unit is 2 or less of an oligomeric ethoxy group or an oligomeric decyloxy group having 2 or more atoms. □
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