| abstract |
The present invention provides a solar cell element including a semiconductor substrate having a light receiving surface and a back surface opposite to the light receiving surface, and a p-type diffusion region containing a p-type impurity and an n-type diffusion containing an n-type impurity on the back surface. a region; the passivation layer is provided in a part or all of a region of the back surface of the semiconductor substrate, and contains at least one selected from the group consisting of Nb2O5, Ta2O5, V2O5, Y2O3, and HfO2; and the first metal electrode is provided in the above p At least a portion of the type of diffusion region; and a second metal electrode disposed at least a portion of the n-type diffusion region. |