| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2013-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9cc9ccffa31b8a092f6edd7dcb7a989
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09cea2ab6b28987e133748e3590ff528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12a8dc53697a9aa533b75f401ecb5452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_900883b1a572644851a9c28af7f5e765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_148a558a93c8e2dbf9c43442691007af |
| publicationDate |
2014-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201411711-A |
| titleOfInvention |
Etching method and semiconductor substrate product using the same, and method of manufacturing semiconductor device |
| abstract |
The etching method has the following steps. The etching solution is coated on the TiN-containing layer in the semiconductor substrate to etch the TiN-containing layer. The etching solution includes water, and a basic compound and an oxidizing agent in the water such that the pH of the etching liquid is 8.5 to 14, and the surface oxygen content of the TiN-containing layer is 0.1 mol% to 10 mol%. |
| priorityDate |
2012-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |