Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02444 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
filingDate |
2013-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_558e17c3e39e5d98bb3f8c88b2bb99f6 |
publicationDate |
2014-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201411700-A |
titleOfInvention |
Process and structure of dopant distribution control in epitaxial trench filling |
abstract |
A method of depositing an epitaxial material using a repeated deposition and etching process. The deposition and etching processes can be repeated until a desired thickness of tantalum material is achieved. A doped ruthenium film may be deposited during the deposition process. The doped germanium film can be selectively deposited in a trench on a substrate. The trench may have a liner comprising tantalum and carbon prior to deposition in the doped germanium film. The doped ruthenium film may also contain ruthenium.锗 promotes uniform dopant distribution within the doped ruthenium film. |
priorityDate |
2012-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |