| abstract |
The present invention relates to a method for treating and/or recovering a cutting slurry, particularly a semiconductor material, during a mechanical separation process. The cutting slurry contains particles made of a semiconductor material and tantalum carbide and/or diamond particles. According to the method of the present invention, a two-stage treatment and/or recovery method is proposed, wherein in the first step, the slurry treatment is carried out at a temperature lower than the melting point of the semiconductor material and, in the second step, at a higher temperature than the melting point of the semiconductor material The temperature treatment was obtained from the product of the first step. At least during the first step and/or the second step, the slurry is introduced into a gas stream and/or passed through and/or surrounded by a gas. |