| abstract |
The first solar cell element has a light-receiving surface electrode on a light-receiving surface of the semiconductor substrate, and a back surface electrode and a passivation layer on the back surface. The second solar cell element has a p-type diffusion region, an n-type diffusion region, and a passivation layer on the back surface of the semiconductor substrate, a first metal electrode on the p-type diffusion region, and a second metal electrode on the n-type diffusion region. The third solar cell element has a first impurity diffusion layer, a second impurity diffusion layer, and a light-receiving surface electrode on the light-receiving surface of the semiconductor substrate, and has a back surface electrode on the back surface and a passivation layer on at least one of the light-receiving surface and the back surface. The passivation layer in the first solar cell element to the third solar cell element contains aluminum oxide. |