| abstract |
An object of the present invention is to provide a method for suppressing damage of a wiring material, a metal barrier layer, and a barrier insulating film of a low dielectric interlayer insulating film, copper or a copper alloy, and removing a surface of a processed object in a manufacturing step of a semiconductor element. Liquid composition for cleaning organic oxyalkylene film, dry etching residue and photoresist, and method for cleaning semiconductor device using the liquid composition for cleaning, and method for manufacturing semiconductor device using the liquid composition for cleaning . The cleaning liquid composition for use in the manufacture of a semiconductor device of the present invention comprises the following components: 0.05 to 25% by mass of a 4-stage ammonium hydroxide, 0.001 to 1.0% by mass of potassium hydroxide, and 5 to 85 mass. % of water-soluble organic solvent, and 0.0005 to 10% by mass of pyrazole. |