| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a665d61597c2731ab4130971ee397dc9 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate |
2013-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c178f49a40294aa670201b7473eb7898 |
| publicationDate |
2014-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201406942-A |
| titleOfInvention |
Honing honing composition for use in a semiconductor substrate having a 矽-through electrode structure and honing method using the honing composition |
| abstract |
The polishing composition of the present invention contains an oxidizing agent having a standard electrode potential of 350 mV or more and 740 mV or less, a polishing accelerator for ruthenium, a polishing rate increasing agent for a ruthenium-through electrode material, a smear prevention agent, and water. |
| priorityDate |
2012-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |