| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate |
2013-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71d50a7293caba9c14997027f9784f5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91fc1d7421977967d3ec5770473160a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f27cd0472813d308f51d664fbe748bc5 |
| publicationDate |
2014-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201405818-A |
| titleOfInvention |
Semiconductor device |
| abstract |
An object of one embodiment of the present invention is to provide a highly reliable semiconductor device that suppresses variations in electrical characteristics in a semiconductor device using an oxide semiconductor. One of the objects of one embodiment of the present invention is to provide a semiconductor device including: a first oxide semiconductor layer contacting a source electrode layer and a drain electrode layer; and a second oxidation of a current path (channel) serving as a transistor Semiconductor layer. The first oxide semiconductor layer functions as a buffer layer for suppressing diffusion of constituent elements of the source electrode layer and the gate electrode layer to the channel. By providing the first oxide semiconductor layer, it is possible to suppress the diffusion of the constituent elements into the interface between the first oxide semiconductor layer and the second oxide semiconductor layer and the second oxide semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9825179-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I672812-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I733950-B |
| priorityDate |
2012-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |