http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201405704-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2012-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d8797bb057b5cf8bb710b475f80285c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8b9af5e014d0badd2f9e2f95088896e |
| publicationDate | 2014-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201405704-A |
| titleOfInvention | Method for forming double-layer inlaid opening |
| abstract | A method for forming a double-layer inlaid opening includes the following steps: First, a first hard mask layer having a trench pattern is formed on a material layer. A dielectric layer is formed on the first hard mask layer and fills the opening of the trench pattern. Thereafter, a second hard mask layer having a contact opening pattern is formed on the first hard mask layer and the dielectric layer, and the second hard mask layer is at least partially overlapped with the first hard mask layer. Subsequently, the second hard mask layer is used as a mask to perform a first etching process to form a contact opening at least in the dielectric layer. |
| priorityDate | 2012-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.