| abstract |
A ruthenium precursor composition is described, comprising a silylene compound selected from the group consisting of terpene compounds of the formula: wherein each R and R1 are independently selected from the group consisting of organic substituents; decyl decene; Bis(indenyl)decene. The terpene compound can be used to form high quality, conformal SiO2, Si3N4, SiC and doped germanium in the fabrication of microelectronic component products by vapor deposition processes such as CVD, pulsed CVD, ALD, and pulsed plasma processes. The acid salt contains a ruthenium film. In one embodiment, such a ruthenium precursor may be used to seal pores in a substrate comprising porous ruthenium oxide by cryogenic deposition of ruthenium oxide in the presence of an oxidant, for example, at a temperature of 50 ° C to 200 ° C Temperature in the °C range. |