Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24975 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78391 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N15-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-10516 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-02031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B17-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-8554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-1245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-018 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-491 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-64 |
filingDate |
2013-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa2efe94f15665e7ce236a1cb8145541 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1103cd29377753b30f25157ad64afcbf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8bf49d5b78bfca08a668c2efced2ed1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39484a3a19f976aec5b46fadbba446af http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ea96810768ba69da4b8c196b10e1724 |
publicationDate |
2014-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201402520-A |
titleOfInvention |
PZT strong dielectric film and manufacturing method thereof |
abstract |
An object of the present invention is to provide a PZT-based ferroelectric thin film having a dielectric property equivalent to that of a conventional ferroelectric thin film and further having high lifetime reliability, and a method for producing the same. [Solution] A lead zirconate titanate (PZT)-based ferroelectric thin film formed on a lower electrode of a substrate having a crystal face aligned with a lower electrode in the (111)-axis direction, and a ferroelectric thin film having: An alignment control layer formed on the lower electrode and having a layer thickness of 45 nm to 270 nm preferentially controlled on the (111) plane, and formed on the alignment control layer and having the same crystal alignment as the alignment control layer a film thickness adjustment layer of crystal alignment; an interface is formed between the alignment control layer and the film thickness adjustment layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10411183-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I650774-B |
priorityDate |
2012-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |