http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201401610-A

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filingDate 2013-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79465538fdad1e5155869f351d42a1cc
publicationDate 2014-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201401610-A
titleOfInvention Organic electronic component, manufacturing method of organic electronic component, plasma processing apparatus
abstract The organic electronic component includes an organic layer 51 formed on the glass substrate G (anode 50), and an encapsulation film covering the organic layer 51. The encapsulating film includes a carbon-containing aCHx film 54 and a carbon-free SiNx film 55. The aCHx film 54 has a first aCHx film 54-1 and a second aCHx film 54-2. The first aCHx film 54-1 was formed by microwave plasma CVD. The second aCHx film 54-2 is subjected to microwave plasma CVD, and a bias electric field is applied to the high frequency power source of the microwave plasma processing apparatus for the aCHx film 54 after film formation or film formation, so that the carbon component is not bonded. The knot is more than the first aCHx film 54-1.
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