| abstract |
The present invention discloses a chemical mechanical polishing liquid for a through-hole, comprising at least one abrasive particle, an azole compound, an acid, one or more anionic surfactants, and an oxidizing agent. The polishing solution has a high removal rate of ruthenium dioxide and a low removal rate of tantalum nitride, which can effectively planarize the barrier layer of the ruthenium via hole without causing metal corrosion, and the removal rate of the metal copper can be Linear adjustment with high defect correction capability and low surface contamination indicators. |