| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a013f27aee93b16ee05c95b0d161b734 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0091 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 |
| filingDate |
2012-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dde5d77f72c0d4f9982e18e35e1d00fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dd8852a10d8c30d20b179370be9e9e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f0805c5fd7bd5835c0a60e1eb5580ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a65d68f186a93b97f52704df5bcd0766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb8212b5322998bab2a75dc2993f1665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b52ad1e67acd723faa01f253989afa3b |
| publicationDate |
2013-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201351704-A |
| titleOfInvention |
Method for preparing light emitting diode |
| abstract |
The invention relates to a method for preparing a light-emitting diode, comprising the steps of: providing a substrate having an epitaxial growth surface; and sequentially epitaxially growing a first semiconductor layer, an active layer and a first layer on the epitaxial growth surface of the substrate a second semiconductor layer; a first optically symmetric layer is disposed on a surface of the second semiconductor layer away from the substrate; a metal plasma generating layer is disposed on a surface of the first optical symmetric layer away from the substrate; and the metal plasma is generated Forming a second optically symmetric layer from the surface of the substrate; forming a first electrode electrically connected to the first semiconductor layer; and forming a second electrode electrically connected to the second semiconductor layer. |
| priorityDate |
2012-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |