http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201351695-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d7f8eeae21f41693a09002fe88edd810 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2012-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f15b1f744fbbddcc0117dc34fd75497 |
| publicationDate | 2013-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201351695-A |
| titleOfInvention | Flip-chip type high voltage AC/DC light emitting diode and manufacturing method thereof |
| abstract | The invention relates to a flip-chip type high-voltage AC/DC light-emitting diode, which is provided for supplying AC or DC high-voltage light-emitting diodes to improve light-emitting efficiency, improve heat dissipation and reduce PN junction temperature. Compared with a general high-voltage light-emitting diode, the present invention bonds a wafer flip-chip to a substrate with good heat dissipation. The main feature is that the positive and negative electrodes are respectively located on the upper and lower sides of the wafer, and each light-emitting unit on the wafer is The flip-chip forms an inverted trapezoidal structure and is covered by the reflective layer to form a structure with an effect of reflecting cups on the upward opening, and at the same time, the shielding of the light-emitting direction of the electrode can be reduced. This structure can greatly facilitate the communication or the exchange due to the negative electrode only above the wafer. The layout design of the light-emitting unit of the DC high-voltage light-emitting diode. |
| priorityDate | 2012-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.