| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a013f27aee93b16ee05c95b0d161b734 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 |
| filingDate |
2012-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b52ad1e67acd723faa01f253989afa3b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb8212b5322998bab2a75dc2993f1665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dde5d77f72c0d4f9982e18e35e1d00fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dd8852a10d8c30d20b179370be9e9e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f0805c5fd7bd5835c0a60e1eb5580ab |
| publicationDate |
2013-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201351681-A |
| titleOfInvention |
Semiconductor structure |
| abstract |
The present invention relates to a semiconductor structure comprising: an active layer comprising a first semiconductor layer, an active layer and a second semiconductor layer, which are sequentially stacked; a third optically symmetric layer is disposed on the second semiconductor layer a side, the third optical symmetric layer has a refractive index ranging from 1.2 to 1.5; a metal layer is disposed on a side of the third optical symmetric layer away from the active layer; and a fourth optical symmetric layer is disposed on a side of the metal layer. The refractive index of the fourth optical symmetric layer ranges from 1.2 to 1.5; and a first optical symmetric layer is disposed on one side of the fourth optical symmetric layer, the refractive index n1 of the first optical symmetric layer and the buffer layer and The difference n1 of the overall equivalent refractive index n2 of the active layer is equal to 0.3, where n1 = |n1-n2|. |
| priorityDate |
2012-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |